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| 30 -10V -5V -6V 20 25 Vds=-5V 20 125C -Id (A) -4.5V 10 Vgs=-4V 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics 15 -Id (A) 15 10 25C 5 0 2 2.5 3 3.5 4 4.5 5 -Vgs(Volts) Figure 2: Transfer Characteristics 1.6 Normalized On-Resistance 14 Rds(on) (m:) Vgs=-10V 13 12 Vgs=-20V 11 10 0 5 10 15 20 25 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.4 Vgs=-20V Id=-11A Vgs=-10V Id=-10A 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 50 Id=-11A 40 1.0E+01 1.0E+00 1.0E-01 Rds(on) (m:) 125C 30 125C 20 1.0E-04 10 25C 25C 1.0E-05 1.0E-06 0 5 10 15 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -Vsd (Volts) Figure 6: Body-Diode Characteristics -Is (A) 1.0E-02 1.0E-03 0 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 10 Vds=-15V Id=-11A 8 2500 Ciss 2000 6 4 Capacitance (pF) -Vgs (Volts) 1500 1000 Coss 500 Crss 2 0 0 5 10 15 20 25 30 35 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 -Vds (Volts) Figure 8: Capacitance Characteristics 100.0 100Ps 10Ps 40 Tj(max)=150C Ta=25C 30 -Id (Amps) 10ms 0.1s Power (W) 10.0 Rds(on) limited 1ms 20 1.0 1s Tj(max)=150C 10s Ta=25C 10 DC 10 100 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=40C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance |
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